symbol v ds v gs i dm t j , t stg symbol typ max 160 200 180 220 r jl 130 160 junction and storage temperature range a p d c 0.625 0.4 -55 to 150 t a =70c i d -2 -1.6 -8 pulsed drain current b power dissipation a t a =25c continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 12 gate-source voltage drain-source voltage -20 c/w maximum junction-to-ambient a steady-state c/w w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja features v ds (v) = -20v i d = -2a (v gs = -10v) r ds(on) < 100m ? (v gs = -10v) r ds(on) < 125m ? (v gs = -4.5v) r ds(on) < 170m ? (v gs = -2.5v) the AO7415 uses advanced trench technology to provide excellent r ds(on) , low gate charge, and operation with gate voltages as low as 2.5v, in the small sot363 footprint. it can be used for a wide variety of applications, including load switching, low current inverters and low current dc-dc converters. it is esd protected to 2kv hbm. standard product a o7415 is pb-free (meets rohs & sony 259 specifications). AO7415l is a green product ordering option. AO7415 and AO7415l are electrically identical. d s g s g d d d d sc-70-6 (sot-363) top view AO7415 p-channel enhancement mode field effect transistor general description www.freescale.net.cn 1 / 4
symbol min typ max units bv dss -20 v -0.5 t j =55c -2.5 1 a 10 a v gs(th) -0.7 -0.9 -1.4 v i d(on) -15 a 80 100 t j =125c 115 98 125 m ? 130 170 m ? g fs 5s v sd -0.84 -0.95 v i s 0.6 a c iss 512 620 pf c oss 77 pf c rss 62 pf r g 9.2 13 ? q g 4.9 6 nc q gs 3.5 nc q gd 3.7 nc t d(on) 11 13 ns t r 810ns t d(off) 34 41 ns t f 12 15 ns t rr 13 17 ns q rr 46nc body diode reverse recovery time body diode reverse recovery charge i f =-2a, di/dt=100a/ s drain-source breakdown voltage i d =-250 a, v gs =0v v gs =-2.5v, i d =-1.0a v gs =-10v, i d =-2a reverse transfer capacitance i f =-2a, di/dt=100a/ s v gs =0v, v ds =-10v, f=1mhz i gss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a v ds =-16v, v gs =0v zero gate voltage drain current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m ? v gs =-4.5v, i d =-1.3a i s =-1a,v gs =0v v ds =-5v, i d =-2a turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =5 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-2a gate source charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters gate drain charge on state drain current v gs =-4.5v, v ds =-5v gate-body leakage current v ds =0v, v gs =10v v ds =0v, v gs =12v gate threshold voltage v ds =v gs i d =-250 a a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. AO7415 p-channel enhancement mode field effect transistor www.freescale.net.cn 2 / 4
typical electrical and thermal characteristics 0 5 10 15 20 25 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) -3.5v v gs =-1.5v -3v -6v -8v -4v -2v -2.5v -5v -7v -9v -10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 -v gs (volts) figure 2: transfer characteristics -i d (a) 60 80 100 120 140 160 180 01234 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.4 0.8 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v v gs =-2.5v i d =-1.3a i d =-1a 60 100 140 180 220 260 300 340 02468 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-2a 25c 125c i d =-2a v gs =-2.5v v gs =-4.5v AO7415 p-channel enhancement mode field effect transistor www.freescale.net.cn 3 / 4
typical electrical and thermal characteristic s 0 1 2 3 4 5 0.0 1.0 2.0 3.0 4.0 5.0 6.0 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 2 4 6 8 10 12 14 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 10ms 0 .1 s 1 s 10s d c r ds(on) limited t j(max) =150c t a =25c v ds =-10v i d =-2a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =220c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s t o n t p d t o n p d AO7415 p-channel enhancement mode field effect transistor www.freescale.net.cn 4 / 4
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